Title :
High speed cryogenic operation of sub-micron pseudomorphic InGaAs/GaAs FETs
Author :
Laskar, J. ; Maranowski, S. ; Kruse, J. ; Ketterson, A. ; Adesida, I. ; Feng, M. ; Kolodzey, J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
Comprehensive DC and high frequency measurements of submicron pseudomorphic AlGaAs/InGaAs MODFETs, InGaAs/GaAs MESFETs, and AlGaAs/InGaAs MISFETs at cryogenic temperatures are discussed. Devices with gate lengths from 0.8 μm to 0.3 μm over a temperature range from 300 K to 110 K were measured. Similar variation in the measured extrinsic current gain cutoff frequency, fT, and similar dependences of the effective electron velocity, Veff, with reduced lattice temperature for the different field-effect transistors were determined. These results provide direct experimental evidence that the saturated velocity of electrons is the most important parameter for high speed operation, and with proper design these different pseudomorphic InGaAs/GaAs field-effect transistors provide similar potential for high speed operation
Keywords :
III-V semiconductors; Schottky gate field effect transistors; carrier mobility; cryogenics; field effect transistors; gallium arsenide; high electron mobility transistors; indium compounds; insulated gate field effect transistors; 0.3 to 0.8 micron; 110 to 300 K; AlGaAs-InGaAs; DC measurements; HEMT; InGaAs-GaAs; MESFETs; MISFETs; MODFETs; cryogenic operation; current gain cutoff frequency; effective electron velocity; field-effect transistors; gate lengths; high frequency measurements; high speed operation; saturated velocity; submicron pseudomorphic devices; Cryogenics; Electrons; FETs; Frequency measurement; Gallium arsenide; HEMTs; Indium gallium arsenide; MESFETs; MISFETs; MODFETs;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170014
