Title :
Millimeter wave power performance of InAlAs/InGaAs/InP HEMTs
Author :
Kao, M.Y. ; Smith, P.M. ; Chao, P.C. ; Ho, P.
Author_Institution :
General Electric, Syracuse, NY, USA
Abstract :
The DC and microwave power performance of both lattice-matched and pseudomorphic InAlAs/InGaAs/InP high electron mobility transistors HEMT lattice-matched to an InP substrate yielded peak power-added efficiency of 52% with power gain of 10.5 db and power density of 0.41 W/mm. When the HEMT was biased and tuned for maximum output power, a power density of 0.78 W/mm and power-added efficiency of 44% with 10.2 dB power gain were measured. At 60 GHz, a 0.15-μm-gate-length and 50-μm-gate-width InP-based HEMT with a pseudomorphic channel demonstrated 41% peak power-added efficiency with 7.2 dB power gain and 0.35 W/mm power density. A similar device also exhibited peak power-added efficiency of 26% with power gain of 4.9 dB and output power density of 0.2 W/mm at 94 GHz
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; power transistors; solid-state microwave devices; 0.15 micron; 20 to 94 GHz; 26 to 52 percent; 4.9 to 10.5 dB; DC power performance; EHF; HEMT; InAlAs-InGaAs-InP; InP substrate; MM-wave power performance; high electron mobility transistors; lattice matched type; microwave power performance; pseudomorphic channel; submicron gate length; Density measurement; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Millimeter wave transistors; Performance gain; Power generation; Power measurement;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170017
