DocumentCode
2612201
Title
Integrated circuits using resonant-tunneling hot electron transistors (RHETs)
Author
Imamura, K. ; Takatsu, M. ; Mori, T. ; Adachihara, T. ; Ohnishi, H. ; Muto, S. ; Yokoyama, N.
Author_Institution
Fujitsu Ltd., Atsugi, Japan
fYear
1991
fDate
5-7 Aug 1991
Firstpage
28
Lastpage
37
Abstract
Research activities to improve the DC and RF performance of RHETs are reviewed. A description is given of RHET integrated circuits, including two-input and three-input logic gates. Using these logic gates and new collector barrier structures, a RHET latch circuit and a full adder have successfully been demonstrated at 77 K and require only one half to one quarter of the number of transistors needed for a conventional full adder
Keywords
bipolar integrated circuits; hot electron transistors; integrated logic circuits; logic gates; resonant tunnelling devices; 77 K; DC performance; RF performance; RHET; collector barrier structures; full adder; integrated circuits; latch circuit; resonant-tunneling hot electron; three-input logic gates; Adders; Circuits; Delay effects; Electrons; Gallium arsenide; Logic gates; Resonance; Resonant tunneling devices; Transistors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location
Ithaca, NY
Print_ISBN
0-7803-0491-8
Type
conf
DOI
10.1109/CORNEL.1991.170029
Filename
170029
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