• DocumentCode
    2612256
  • Title

    The use of CuIn1-xGaxSe2 layers to improve the performance of CuInSe2 cells

  • Author

    Schwartz, R.J. ; Gray, J.L.

  • Author_Institution
    Sch. of Electr. Eng., Purdue Univ., Lafayette, IN, USA
  • fYear
    1990
  • fDate
    21-25 May 1990
  • Firstpage
    570
  • Abstract
    The initial results of the modeling of CuIn1-xGax Se2 cells presently reported can provide considerable insight into the design of these cells. The use of 1 .64-eV bandgap CuIn 1-xGaxSe2, layers in the space-charge region to improve open-circuit voltage and at the rear of the base to act as a back-surface field region is discussed. It is shown that the open-circuit voltage can be improved with the use of these layers and that the short-circuit current and fill factor can be significantly influenced by the use of a widegap layer
  • Keywords
    copper compounds; indium compounds; short-circuit currents; solar cells; space charge; ternary semiconductors; CuIn1-xGaxSe2 layers; CuInSe2 solar cells; back-surface field region; fill factor; open-circuit voltage; short-circuit current; space-charge region; widegap layer; Absorption; Gallium arsenide; Heterojunctions; Numerical models; Photonic band gap; Photovoltaic cells; Short circuit currents; Silicon; Space charge; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
  • Conference_Location
    Kissimmee, FL
  • Type

    conf

  • DOI
    10.1109/PVSC.1990.111734
  • Filename
    111734
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2612256