DocumentCode :
2612277
Title :
The origin of the temperature dependence in resonant tunneling transport
Author :
Shen, G.D. ; Xu, D.X. ; Willander, M. ; Hansson, G.V.
Author_Institution :
Dept. of Phys., Linkoping Univ., Sweden
fYear :
1991
fDate :
5-7 Aug 1991
Firstpage :
84
Lastpage :
93
Abstract :
The temperature dependence of transport in resonant tunneling devices is studied theoretically and compared with experiments. The most contributions come from the one-dimensional carrier energy distribution factor, the position of the Fermi energy, and the temperature dependences of some physical parameters such as Fermi energy, effective mass, and carrier mobility. When these physical factors are considered, the experimental results, including both increasing and decreasing peak current with temperature, can be explained in a coherent way
Keywords :
Fermi level; carrier mobility; effective mass (band structure); resonant tunnelling devices; semiconductor junctions; temperature; tunnelling; Fermi energy; carrier mobility; effective mass; one-dimensional carrier energy distribution factor; physical parameters; resonant tunneling devices; resonant tunneling transport; temperature dependence; Effective mass; Frequency; Gallium arsenide; Germanium silicon alloys; Photonic band gap; Physics; Probability; Resonant tunneling devices; Silicon germanium; Temperature dependence;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
Type :
conf
DOI :
10.1109/CORNEL.1991.170037
Filename :
170037
Link To Document :
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