Title :
Modeling of thin-film Cu(In,Ga)Se2 solar cells
Author :
Troni, F. ; Dodi, F. ; Sozzi, G. ; Menozzi, R.
Author_Institution :
Dept. of Inf. Eng., Univ. of Parma, Parma, Italy
Abstract :
We show results of numerical and compact modeling of poly-crystalline CIGS thin-film solar cells. We use numerical simulations as a benchmark to develop a simple, physics-based compact model of the behavior of the cell in the dark. We show that, while the single-crystal cell behavior can be accurately described by a two-diode model, when grain boundaries are present and active a four-diode model is required. Finally, we show results of the application of numerical simulations to the study of the cell degradation under damp heat stress conditions.
Keywords :
copper compounds; diodes; gallium compounds; grain boundaries; indium compounds; solar cells; thin film devices; CuInGaSe2; cell degradation; damp heat stress condition; four-diode model; grain boundaries; physics-based compact model; polycrystalline CIGS thin-film solar cell; single-crystal cell behavior; two-diode model; Grain boundaries; Grain size; Niobium; Numerical models; Numerical simulation; Photovoltaic cells; Semiconductor diodes;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604580