Title :
A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process
Author :
Pan, Feng ; Subramanian, Vivek
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA
Abstract :
In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I-V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.
Keywords :
Monte Carlo methods; random-access storage; semiconductor device metallisation; I-V characteristics; SET process; SET voltage; dynamic switching property; electrochemical metallization RRAM; filament overgrowth phenomena; kinetic Monte Carlo; material property; on-state resistance; resistive RAM; voltage sweep rate; writing speed; Anodes; Cathodes; Ions; Metals; Resistance; Surface treatment; Switches;
Conference_Titel :
Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on
Conference_Location :
Bologna
Print_ISBN :
978-1-4244-7701-2
Electronic_ISBN :
1946-1569
DOI :
10.1109/SISPAD.2010.5604584
