A Kinetic Monte Carlo study on the dynamic switching properties of electrochemical metallization RRAMs during the SET process

Author

Pan, Feng ; Subramanian, Vivek

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Univ. of California Berkeley, Berkeley, CA, USA

fYear

2010

fDate

6-8 Sept. 2010

Firstpage

19

Lastpage

22

Abstract

In this paper, a simulation process based on Kinetic Monte Carlo (KMC) for an electrochemical metallization (ECM) resistive RAM (RRAM) is demonstrated. This simulation tool can investigate all the major dynamics properties of such devices. In particular, the voltage sweep rate dependent I-V characteristics, the variations of SET voltage, writing speed, on-state resistance, filament overgrowth phenomena and the effect of material properties are studied.

Keywords

Monte Carlo methods; random-access storage; semiconductor device metallisation; I-V characteristics; SET process; SET voltage; dynamic switching property; electrochemical metallization RRAM; filament overgrowth phenomena; kinetic Monte Carlo; material property; on-state resistance; resistive RAM; voltage sweep rate; writing speed; Anodes; Cathodes; Ions; Metals; Resistance; Surface treatment; Switches;

fLanguage

English

Publisher

ieee

Conference_Titel

Simulation of Semiconductor Processes and Devices (SISPAD), 2010 International Conference on

Conference_Location

Bologna

ISSN

1946-1569

Print_ISBN

978-1-4244-7701-2

Electronic_ISBN

1946-1569

Type

conf

DOI

10.1109/SISPAD.2010.5604584

Filename

5604584