Title :
SEU study of 4T, 6T, 7T, 8T, 10T MOSFET based SRAM using TCAD simulation
Author :
Bhuvaneshwari, Y.V. ; Sai, Nama Prem ; Kumar, N. Vinodh ; Thiruvenkatesan, C. ; Srinivasan, R.
Author_Institution :
ECE Dept., SSN Coll. of Eng., Chennai, India
Abstract :
In this paper radiation performance of 4T, 6T, 7T, 8T and 10T MOSFET based-SRAMs are studied using TCAD simulations. The minimum dose (critical dose) required to flip contents of the cell are extracted, compared and analyzed. The simulation results show that 10T SRAM shows better radiation performance whereas 4T-SRAM shows worst radiation performance.
Keywords :
MOSFET; SRAM chips; circuit simulation; integrated circuit design; radiation hardening (electronics); technology CAD (electronics); 4T-SRAM; MOSFET; SEU study; TCAD simulation; Doping; Educational institutions; MOSFET; Random access memory; Semiconductor process modeling; Single event upsets; Topology; Critical Dose; SEU; TCAD; Various topologies of SRAM;
Conference_Titel :
Information Communication and Embedded Systems (ICICES), 2014 International Conference on
Conference_Location :
Chennai
Print_ISBN :
978-1-4799-3835-3
DOI :
10.1109/ICICES.2014.7034119
