DocumentCode
2612360
Title
A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers
Author
Todoroki, S. ; Takahashi, T. ; Aiki, K. ; Uchida, H.
Author_Institution
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-machi, Totsuka-ku, Yokohama, Japan
fYear
1983
fDate
30407
Firstpage
160
Lastpage
166
Abstract
Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects, dark regions and <100> dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.
Keywords
Crystallization; Degradation; Electron beams; Failure analysis; Gallium arsenide; Gold; Laser modes; Radiative recombination; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361978
Filename
4208499
Link To Document