Title :
A New Failure Mechanism Related to the Formation of Dark Defects in GaAlAs Visible Lasers
Author :
Todoroki, S. ; Takahashi, T. ; Aiki, K. ; Uchida, H.
Author_Institution :
Production Engineering Research Laboratory, Hitachi, Ltd., 292 Yoshida-machi, Totsuka-ku, Yokohama, Japan
Abstract :
Dark defects related to degradation in GaAlAs visible lasers were investigated by using an electron beam induced current mode of a SEM. Two new modes of defects, dark regions and <100> dark lines, were observed bordering the edge of the stripe regions. These defects are related to a device structure and the crystallization of epitaxial wafers.
Keywords :
Crystallization; Degradation; Electron beams; Failure analysis; Gallium arsenide; Gold; Laser modes; Radiative recombination; Substrates; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361978
