DocumentCode
2612375
Title
Radiation-Induced Soft Errors and Floating Gate Memories
Author
Caywood, J.M. ; Prickett, B.L.
Author_Institution
Xicor, Inc., 851 Buckeye Ct., Milpitas, CA 95035
fYear
1983
fDate
30407
Firstpage
167
Lastpage
172
Abstract
A new failure mechanism which may be induced in floating gate memories by ionizing radiation is discussed. This mechanism, which is designated a "firm error", is modeled in some detail. Calculations which show that the MTBF for alpha particles emitted by ceramic packaging materials is > 100,000 years are verified experimentally. The effect of device scaling on this mechanism is also discussed.
Keywords
Alpha particles; Ceramics; Charge transfer; Circuits; Electrons; Error correction; Failure analysis; Ionizing radiation; Nonvolatile memory; Optical scattering;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.361979
Filename
4208500
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