Title :
Emitter structure influence on the electron transport mechanism in resonant tunneling diodes
Author :
Koenig, E.T. ; Jogai, B. ; Huang, C.I. ; Evans, K.R. ; Stutz, C.E.
Author_Institution :
Wright Lab., WPAFB, OH, USA
Abstract :
A study conducted on six double-barrier resonant tunneling diode structures with identical GaAs quantum wells, Al0.42Ga0.58As barriers, and GaAs collector space layers grown by molecular beam epitaxy (MBE) is discussed. The emitter layers, however, were varied in order to establish the effects of different emitter conduction band configurations on device performance. The analysis is carried out both experimentally, by examining I-V and dI/dV measurements, and theoretically, by calculating and studying the self-consistent solution of the conduction bandedge, transmission probability, carrier concentration, and wavefunction probability density. Insight is offered into how bandedge variations affect the transmission qualities of a double-barrier resonant tunneling diode structure and hence the resulting I-V characteristic
Keywords :
III-V semiconductors; aluminium compounds; carrier density; conduction bands; gallium arsenide; molecular beam epitaxial growth; resonant tunnelling devices; semiconductor quantum wells; tunnel diodes; Al0.42Ga0.58As barriers; GaAs collector space layers; GaAs quantum wells; GaAs-Al0.42Ga0.58As; I-V characteristic; MBE; RTD; bandedge variations; carrier concentration; conduction bandedge; double-barrier; electron transport mechanism; emitter conduction band configurations; emitter layers; molecular beam epitaxy; resonant tunneling diodes; transmission probability; wavefunction probability density; Diodes; Electron emission; Filters; Gallium arsenide; Molecular beam epitaxial growth; Physics; Probability; Resonant tunneling devices; Semiconductor process modeling; Space technology;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170044