Emitter structure influence on the electron transport mechanism in resonant tunneling diodes

A study conducted on six double-barrier resonant tunneling diode structures with identical GaAs quantum wells, Al_0.42Ga_0.58As barriers, and GaAs collector space layers grown by molecular beam epitaxy (MBE) is discussed. The emitter layers, however, were varied in order to establish the effects of different emitter conduction band configurations on device performance. The analysis is carried out both experimentally, by examining I-V and dI/dV measurements, and theoretically, by calculating and studying the self-consistent solution of the conduction bandedge, transmission probability, carrier concentration, and wavefunction probability density. Insight is offered into how bandedge variations affect the transmission qualities of a double-barrier resonant tunneling diode structure and hence the resulting I-V characteristic