Title :
Extraction of carrier transport and electronic parameters of submicrometer gate-length MODFET´s on InP and GaAs substrates
Author :
Fu, Shih-Tsang ; Das, Mukunda B.
Author_Institution :
Dept. of Electr. & Comput. Eng., Pennsylvania State Univ., University Park, PA, USA
Abstract :
The transport and electronic parameters of 0.25-μm and 0.15-μm-gate-length MODFETs based on InP and GaAs material systems extracted through a systematic measurement technique are discussed. The maximum intrinsic sheet carrier concentrations, n2DEG, for 0.25-μm and 0.15-μm gate-length InP-based lattice-matched (In0.52Al0.48As/In0.53+xGa0.47-x As/ In0.52Al0.48As, with x=0) and strained channel (x=0.16) MODFETs are experimentally determined to be 0.55, 0.30, and 0.50×1012 cm-2, respectively, whereas the values of the same parameter in GaAs-based pseudomorphic MODFETs are found to be 1.20 and 0.57×1012 cm-2, for 0.25-μm and 0.15-μm gate-length devices, respectively. The extracted effective carrier average velocities for the former three devices are 4.0, 6.9, and 8.2×107 cm/s, and those for the latter two devices are 2.9 and 5.7×107 cm/s, respectively
Keywords :
carrier density; carrier mobility; high electron mobility transistors; 0.15 micron; 0.25 micron; GaAs substrates; In0.52Al0.48As-In0.53+x Ga0.47-xAs-In0.52Al0.48As; InP substrate; MODFETs; carrier transport; electronic parameters; measurement technique; pseudomorphic MODFETs; sheet carrier concentrations; strained channel MODFET; submicrometer gate-length; submicron type; Capacitance; Electron mobility; FETs; Gain; Gallium arsenide; HEMTs; Indium phosphide; MODFETs; Measurement techniques; Sheet materials;
Conference_Titel :
High Speed Semiconductor Devices and Circuits, 1991., Proceedings IEEE/Cornell Conference on Advanced Concepts in
Conference_Location :
Ithaca, NY
Print_ISBN :
0-7803-0491-8
DOI :
10.1109/CORNEL.1991.170046
