Title :
Thickness Dependence of Dielectric Breakdown Failure of Thermal SiO2 Films
Author :
Yamabe, Kikuo ; Taniguchi, Kenji ; Matsushita, Yoshiaki
Author_Institution :
Toshiba Corporation, Toshiba Research and Development Center, 72, Horikawacho Saiwai-ku Kawasaki-city, Kanagawa, 210, Japan
Abstract :
Thickness dependence of total dielectric breakdown failure fraction of thermal SiO2 films has a minimum value at around l10A and a maximum value at around 400A. It is concluded that two main origins of dielectric breakdown failures of thin SiO2 film are surface contamination prior to gate oxidation and microdefects in Si substrates.
Keywords :
Dielectric breakdown; Dielectric substrates; Dielectric thin films; Electric breakdown; Oxidation; Research and development; Semiconductor device breakdown; Semiconductor films; Surface contamination; Very large scale integration;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361982
