Title :
Characterization and Screening of SiO2 Defects in EEPROM Structures
Author :
Shiner, R.E. ; Mielke, N.R. ; Haq, R.
Author_Institution :
Intel Corporation, 3065 Bowers Avenue, Santa Clara, California 95051. (408) 987-8080
Keywords :
EPROM; Electrons; Nonvolatile memory; Silicon compounds; Stress; Temperature; Testing; Tunneling; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
DOI :
10.1109/IRPS.1983.361991
