Title :
Magnetic hysteresis modeling in perpendicular MRAM system for high Gb/Chip
Author :
Won, Hyuk ; Yun, Seung Ho ; Park, Gwan Soo
Author_Institution :
Sch. of Electr. Eng., Pusan Nat. Univ., Busan, South Korea
Abstract :
In this paper, we present a micromagnetic analysis of the new MRAM system for high Gb/Chip. Proposed MRAM has a strong switching field owing to two poles added on both sides of the free layer, just like perpendicular magnetic recording heads on the hard disk drive system. By comparing conventional MRAM and new MRAM, we show that new MRAM has a strong switching field on the same injected current.
Keywords :
MRAM devices; disc drives; hard discs; magnetic hysteresis; micromagnetics; perpendicular magnetic recording; MRAM system; hard disk drive system; magnetic hysteresis modeling; micromagnetic analysis; perpendicular magnetic recording heads; Current density; Magnetic devices; Magnetic fields; Magnetic hysteresis; Magnetic switching; Micromagnetics; Random access memory; Saturation magnetization; Soft magnetic materials; Writing;
Conference_Titel :
Electromagnetic Field Computation (CEFC), 2010 14th Biennial IEEE Conference on
Conference_Location :
Chicago, IL
Print_ISBN :
978-1-4244-7059-4
DOI :
10.1109/CEFC.2010.5481674
