DocumentCode
2612621
Title
Magnetic hysteresis modeling in perpendicular MRAM system for high Gb/Chip
Author
Won, Hyuk ; Yun, Seung Ho ; Park, Gwan Soo
Author_Institution
Sch. of Electr. Eng., Pusan Nat. Univ., Busan, South Korea
fYear
2010
fDate
9-12 May 2010
Firstpage
1
Lastpage
1
Abstract
In this paper, we present a micromagnetic analysis of the new MRAM system for high Gb/Chip. Proposed MRAM has a strong switching field owing to two poles added on both sides of the free layer, just like perpendicular magnetic recording heads on the hard disk drive system. By comparing conventional MRAM and new MRAM, we show that new MRAM has a strong switching field on the same injected current.
Keywords
MRAM devices; disc drives; hard discs; magnetic hysteresis; micromagnetics; perpendicular magnetic recording; MRAM system; hard disk drive system; magnetic hysteresis modeling; micromagnetic analysis; perpendicular magnetic recording heads; Current density; Magnetic devices; Magnetic fields; Magnetic hysteresis; Magnetic switching; Micromagnetics; Random access memory; Saturation magnetization; Soft magnetic materials; Writing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electromagnetic Field Computation (CEFC), 2010 14th Biennial IEEE Conference on
Conference_Location
Chicago, IL
Print_ISBN
978-1-4244-7059-4
Type
conf
DOI
10.1109/CEFC.2010.5481674
Filename
5481674
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