DocumentCode
2612705
Title
RF Operational Life Test of Power GaAs FET Amplifiers
Author
Postal, R.B. ; Russell, K.J. ; Hyett, D.D.
Author_Institution
Spacecraft Telecommunication Equipment Section, 161-213, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
fYear
1983
fDate
30407
Firstpage
293
Lastpage
296
Abstract
This paper describes the life testing of twenty-four 3/4-W, X-band, solid-state, three-stage power amplifiers through 24,000 hours. Sixteen actively driven modules were subjected to a temperature of 75°C for 24,000 hours, and eight modules started at 75°C for 8000 hours were tested at 125°C for 16,000 additional hours. Measurements of module output phase and amplitude were made at room temperature after each 1000 hours of test. No catastrophic failures occurred through 24,000 hours of testing, although one module exceeded failure limits in the 75°C test and six modules exceeded limits in the 125°C test. Average RF amplitude drift for the 75°C test modules is ¿0.31 dB, while standard deviation for RF phase is 9.0 degrees.
Keywords
FETs; Gallium arsenide; Life testing; Operational amplifiers; Phase measurement; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location
Phoenix, AZ, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1983.362000
Filename
4208521
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