• DocumentCode
    2612705
  • Title

    RF Operational Life Test of Power GaAs FET Amplifiers

  • Author

    Postal, R.B. ; Russell, K.J. ; Hyett, D.D.

  • Author_Institution
    Spacecraft Telecommunication Equipment Section, 161-213, Jet Propulsion Laboratory, California Institute of Technology, 4800 Oak Grove Drive, Pasadena, California 91109
  • fYear
    1983
  • fDate
    30407
  • Firstpage
    293
  • Lastpage
    296
  • Abstract
    This paper describes the life testing of twenty-four 3/4-W, X-band, solid-state, three-stage power amplifiers through 24,000 hours. Sixteen actively driven modules were subjected to a temperature of 75°C for 24,000 hours, and eight modules started at 75°C for 8000 hours were tested at 125°C for 16,000 additional hours. Measurements of module output phase and amplitude were made at room temperature after each 1000 hours of test. No catastrophic failures occurred through 24,000 hours of testing, although one module exceeded failure limits in the 75°C test and six modules exceeded limits in the 125°C test. Average RF amplitude drift for the 75°C test modules is ¿0.31 dB, while standard deviation for RF phase is 9.0 degrees.
  • Keywords
    FETs; Gallium arsenide; Life testing; Operational amplifiers; Phase measurement; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Solid state circuits; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1983. 21st Annual
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1983.362000
  • Filename
    4208521