• DocumentCode
    2612749
  • Title

    Reliability of GaAs MESFET Logic Circuits

  • Author

    Namordi, M.R. ; White, W.A.

  • Author_Institution
    Texas Instruments Incorporated, Central Research Laboratories, P.O. Box 225936, M/S 134, Dallas, Texas 75265
  • fYear
    1983
  • fDate
    30407
  • Firstpage
    312
  • Lastpage
    315
  • Abstract
    Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.
  • Keywords
    Circuit testing; Gallium arsenide; Heat sinks; Laboratories; Life testing; Logic circuits; MESFET circuits; Stress; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1983. 21st Annual
  • Conference_Location
    Phoenix, AZ, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1983.362003
  • Filename
    4208524