DocumentCode :
2612749
Title :
Reliability of GaAs MESFET Logic Circuits
Author :
Namordi, M.R. ; White, W.A.
Author_Institution :
Texas Instruments Incorporated, Central Research Laboratories, P.O. Box 225936, M/S 134, Dallas, Texas 75265
fYear :
1983
fDate :
30407
Firstpage :
312
Lastpage :
315
Abstract :
Twelve depletion mode GaAs MESFET logic circuits were subjected to a step-stress life test. Each circuit consisted of an 11-stage ring oscillator with one buffer stage. Both BFL and SDFL circuits with Vp ¿ ¿2.0 V and ¿1.0 V were represented. The circuits were operated for 500 hours at each of eight temperature stress steps ranging between 25° and 200°C with 25°C increments. No chip failures occurred upon completion of the life test. Reasonable interpretation of these results suggests that GaAs MESFET logic circuits should be very reliable.
Keywords :
Circuit testing; Gallium arsenide; Heat sinks; Laboratories; Life testing; Logic circuits; MESFET circuits; Stress; Temperature; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1983. 21st Annual
Conference_Location :
Phoenix, AZ, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1983.362003
Filename :
4208524
Link To Document :
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