DocumentCode
2612882
Title
Reliability Implications of Nitrogen Contamination During Deposition of Sputtered Aluminum/Silicon Metal Films
Author
Klema, Jon ; Pyle, Ronald ; Domangue, Edward
Author_Institution
Motorola, Inc., MOS Integrated Circuit Group, 3501 Ed Bluestein Blvd., Austin, Texas 78721
fYear
1984
fDate
30773
Firstpage
1
Lastpage
5
Abstract
Aluminum/Silicon (Al/Si) sputtered metal films for MOS integrated circuit metalization deposited under conditions of nitrogen contamination coupled with a subsequent silicon nitride (Si3N4) passivation can seriously impact product relialility. The reliability implications of this sputtered metallization process will be discussed. The discussion will include film characteristics and structure, description f the failure mechanism, life modeling, accelerated testing, and electromigration behavior.
Keywords
Aluminum; Contamination; Coupling circuits; Integrated circuit reliability; MOS integrated circuits; Metallization; Nitrogen; Passivation; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362012
Filename
4208536
Link To Document