DocumentCode
2612895
Title
New Failure Mechanisms in Sputtered Aluminum-Silicon Films
Author
Curry, J. ; Fitzgibbon, G. ; Guan, Y. ; Muollo, R. ; Nelson, G. ; Thomas, Abu
Author_Institution
International Business Machines Corporation, P. O. Box 390, Poughkeepsie, New York 12602
fYear
1984
fDate
30773
Firstpage
6
Lastpage
8
Abstract
A new failure mechanism resulting in open metal bit- lines was observed during reliability testing of vendor 64k dynamic random access memory (RAIM) products using sputtered Al-Si metallurgy. Life test data, physical failure analysis, and metal film characterization are presented, The observed phenomenan is not strictly electromigratiotn, but rather a temperature-dependent metal-deformation process, such as creep, resulting in intergranular fracture.
Keywords
Failure analysis; Kinetic theory; Passivation; Random access memory; Semiconductor films; Silicon; Temperature; Testing; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362013
Filename
4208537
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