Title :
The Physics and Reliability of Fusing Polysilicon
Author :
Ito, A. ; George, E. W Pete ; Lowry, R.K. ; Swasey, H.A.
Author_Institution :
Harris Semiconductor, Digital Products Division, P. O. Box 883, MS 54-125, Melbourne, Florida 32901. (305) 724-7000
Abstract :
This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.
Keywords :
Conductivity; Current density; Fuses; Grain boundaries; Grain size; Physics; Schottky barriers; Temperature; Thermionic emission; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362015
