DocumentCode
2612921
Title
The Physics and Reliability of Fusing Polysilicon
Author
Ito, A. ; George, E. W Pete ; Lowry, R.K. ; Swasey, H.A.
Author_Institution
Harris Semiconductor, Digital Products Division, P. O. Box 883, MS 54-125, Melbourne, Florida 32901. (305) 724-7000
fYear
1984
fDate
30773
Firstpage
17
Lastpage
29
Abstract
This paper is presented to further the understanding of the physics of programming polysilicon fuses. One and two dimensional models have been developed to understand the fusing event and predict the fusing time and power relationship. The predicted fusibility (fusing time and power dependence) is shown to be in good agreement with the experimental data.
Keywords
Conductivity; Current density; Fuses; Grain boundaries; Grain size; Physics; Schottky barriers; Temperature; Thermionic emission; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362015
Filename
4208539
Link To Document