• DocumentCode
    2612969
  • Title

    The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies

  • Author

    Lloyd, J.R. ; Knight, J.A.

  • Author_Institution
    IBM General Technology Division, East Fishkill, Hopewell Junction, NY 12533
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    48
  • Lastpage
    51
  • Abstract
    A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
  • Keywords
    Chromium; Circuit testing; Conducting materials; Conductors; Electromigration; Extrapolation; Passivation; Stress; Topology; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362018
  • Filename
    4208542