DocumentCode
2612969
Title
The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
Author
Lloyd, J.R. ; Knight, J.A.
Author_Institution
IBM General Technology Division, East Fishkill, Hopewell Junction, NY 12533
fYear
1984
fDate
30773
Firstpage
48
Lastpage
51
Abstract
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
Keywords
Chromium; Circuit testing; Conducting materials; Conductors; Electromigration; Extrapolation; Passivation; Stress; Topology; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362018
Filename
4208542
Link To Document