DocumentCode :
2612969
Title :
The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
Author :
Lloyd, J.R. ; Knight, J.A.
Author_Institution :
IBM General Technology Division, East Fishkill, Hopewell Junction, NY 12533
fYear :
1984
fDate :
30773
Firstpage :
48
Lastpage :
51
Abstract :
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
Keywords :
Chromium; Circuit testing; Conducting materials; Conductors; Electromigration; Extrapolation; Passivation; Stress; Topology; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1984.362018
Filename :
4208542
Link To Document :
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