Title : 
The Relationship Between Electromigration-Induced Short-Circuit and Open-Circuit Failure Times in Multi-Layer VLSI Technologies
         
        
            Author : 
Lloyd, J.R. ; Knight, J.A.
         
        
            Author_Institution : 
IBM General Technology Division, East Fishkill, Hopewell Junction, NY 12533
         
        
        
        
        
        
            Abstract : 
A comparison between the electromigration lifetime, defined as open circuits and short circuits in Cr/Al-Cu conductor stripes undergoing high current density stress, was made. The lifetime, if defined by open-circuit failure time, is much longer with a larger standard deviation than that defined by short-circuit failure time. The implications for reliability predictions are discussed.
         
        
            Keywords : 
Chromium; Circuit testing; Conducting materials; Conductors; Electromigration; Extrapolation; Passivation; Stress; Topology; Very large scale integration;
         
        
        
        
            Conference_Titel : 
Reliability Physics Symposium, 1984. 22nd Annual
         
        
            Conference_Location : 
Las Vegas, NV, USA
         
        
        
        
            DOI : 
10.1109/IRPS.1984.362018