Title :
Theoretical and Experimental Studies of Failure Mechanisms in Gallium Arsenide Three-Terminal Transferred Electron Devices
Author :
Grubin, H.L. ; Anderson, W.T., Jr. ; Christou, A.
Author_Institution :
Scientific Research Associates, inc., Glastonbury, CT
Abstract :
A two-dimensional transient numerical study of failure mechanisms in gallium arsenide transferred electron devices was undertaken. The simulation, which incorporates the effects of elevated temperature operation, mobility and donor density variations was designed to assess these contributions on device operation and reliability. The results of the study are consistent with a previously proposed reliability model and are discussed below.
Keywords :
Anodes; Electron mobility; FETs; Failure analysis; Gallium arsenide; Gunn devices; Logic devices; Propagation delay; Schottky barriers; Temperature;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362019
