Title :
Fast Light-Emitting Silicon-Germanium Nanostructures
Author :
Lockwood, David J. ; Tsybeskov, Leonid
Author_Institution :
Meas. Sci. & Stand., Nat. Res. Council, Ottawa, ON, Canada
Abstract :
Results obtained from photoluminescence (PL) measurements performed on Si/Si 1-xGe x nanostructures with a single Si 1-xGe x nanometer-thick layer (NL) incorporated into Si/Si 0.6Ge 0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.
Keywords :
Ge-Si alloys; multilayers; nanophotonics; nanostructured materials; photoluminescence; Si-Si0.6Ge0.4; cluster multilayers; fast light-emitting silicon-germanium nanostructures; heterointerface composition; photoluminescence measurements; time-dependent recombination rates; Nanostructures; Radiative recombination; Silicon; Silicon germanium; Temperature measurement; Wavelength measurement; Carrier recombination; SiGe alloy; germanium; interface; nanostructures; photoluminescence; silicon;
Journal_Title :
Selected Topics in Quantum Electronics, IEEE Journal of
DOI :
10.1109/JSTQE.2013.2292878
