Fast Light-Emitting Silicon-Germanium Nanostructures

Author

Lockwood, David J. ; Tsybeskov, Leonid

Author_Institution

Meas. Sci. & Stand., Nat. Res. Council, Ottawa, ON, Canada

Volume

20

Issue

4

fYear

2014

fDate

July-Aug. 2014

Firstpage

225

Lastpage

231

Abstract

Results obtained from photoluminescence (PL) measurements performed on Si/Si 1-xGe x nanostructures with a single Si 1-xGe x nanometer-thick layer (NL) incorporated into Si/Si 0.6Ge 0.4 cluster multilayers (CMs) are reviewed. By employing depth-dependent pulsed laser excitation, the SiGe NL PL decay is found to be nearly a 1000 times faster compared to that in CM PL. A physical model taking into consideration the Si/SiGe hetero-interface composition is proposed to explain the fast and slow time-dependent recombination rates.

Keywords

Ge-Si alloys; multilayers; nanophotonics; nanostructured materials; photoluminescence; Si-Si_0.6Ge_0.4; cluster multilayers; fast light-emitting silicon-germanium nanostructures; heterointerface composition; photoluminescence measurements; time-dependent recombination rates; Nanostructures; Radiative recombination; Silicon; Silicon germanium; Temperature measurement; Wavelength measurement; Carrier recombination; SiGe alloy; germanium; interface; nanostructures; photoluminescence; silicon;

fLanguage

English

Journal_Title

Selected Topics in Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

1077-260X

Type

jour

DOI

10.1109/JSTQE.2013.2292878

Filename

6684282