• DocumentCode
    2613105
  • Title

    Predicting Oxide Failure Rates using the Matrix of a 64K DRAM Chip

  • Author

    Wendell, Dennis ; Segers, Dennis ; Wang, Billy

  • Author_Institution
    Mostek Corporation, 1215 W. Crosby Road, M/S 736, Carrollton, TX 75006
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    113
  • Lastpage
    118
  • Abstract
    Long-term integrity and stability of oxides is of prime concern in MOS reliability. This paper presents a test method for the in-situ prediction of thin film thermal oxide failure rates. The method is correlated with standard accelerated device studies.
  • Keywords
    Acceleration; Circuit testing; Electric breakdown; Equations; Implants; MOS capacitors; Oxidation; Stability; Stress; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362027
  • Filename
    4208551
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613105