Title :
Predicting Oxide Failure Rates using the Matrix of a 64K DRAM Chip
Author :
Wendell, Dennis ; Segers, Dennis ; Wang, Billy
Author_Institution :
Mostek Corporation, 1215 W. Crosby Road, M/S 736, Carrollton, TX 75006
Abstract :
Long-term integrity and stability of oxides is of prime concern in MOS reliability. This paper presents a test method for the in-situ prediction of thin film thermal oxide failure rates. The method is correlated with standard accelerated device studies.
Keywords :
Acceleration; Circuit testing; Electric breakdown; Equations; Implants; MOS capacitors; Oxidation; Stability; Stress; Transistors;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362027
