DocumentCode
2613215
Title
Characteristics & Reliability of 100Ã\x85 Oxides
Author
Baglee, David A.
Author_Institution
Advanced Development Department, Texas Instruments Incorporated, P. O. Box 1443, Houston, Texas 77001
fYear
1984
fDate
30773
Firstpage
152
Lastpage
155
Abstract
The electrical characteristics and the long term reliability of 100Ã… silicon dioxide films is examined in detail. In this paper the initial "as grown" properties are presented and the effects of subsequent process steps are discussed. The long term reliability of 100Ã… oxide having undergone a full double level polysilicon process is examined. An activation energy of 0.3eV was found and electric field acceleration was determined to be 100/MV/cm.
Keywords
Capacitors; Circuits; Electric variables; Equations; Etching; Instruments; Leakage current; Silicon compounds; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362035
Filename
4208559
Link To Document