Impact Of Advances In Technology On The Properties Of Si/SiO2 Interface

With the continuing progress in the Si-VLSI technology from one generation to the next, the number of ion-implantation and dry-etching processes which cause damages to the Si/SiO2 interface region has increased, while at the same time the oxidation and annealing temperatures have decreased, The net impact is manifested as a significant monotonic decrease in the low-field mobility of the inversion layer electrons. Furthermore, the response of the interface to the CO60 source of gamma rays, and the effects of radiation damage on the rate of drift in MOSFETs due to injection of hot-carriers, suggest that the advances in technology have increased the susceptibility of IC´s to hot-carrier injection related drifts.