Title :
An Ion Implant Induced Instability Mechanism in CMOS/SOS Device
Author :
Spialter, Ella B. ; Brandewie, Jerry V. ; Kjar, Raymond A.
Author_Institution :
Rockwell International Corporation, Defense Electronics Operations, Anaheim, CA 92803. 714/632-1281
Abstract :
A complex charge trapping instability was identified in CMOS/SOS circuits which had failed during extended life tests. The cause of this instability was shown to be latent oxide damage from forced oxide currents during ion implantation. A conducting wafer coating during ion implant was found to eliminate the forced oxide current and to prevent the instability.
Keywords :
Circuit testing; Current supplies; Degradation; Etching; Failure analysis; Implants; Life testing; Power supplies; Silicon; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362037
