A low-power SiGe-HBT active double-balanced mixer for compact integrated C-band wireless-LAN receivers

Author

Carta, Corrado ; Vogt, Rolf ; Bächtold, Werner

Author_Institution

Electromagn. Fields & Microwave Electron. Lab., Swiss Fed. Inst. of Technol., Zurich, Switzerland

Volume

3

fYear

2003

fDate

20-23 Sept. 2003

Abstract

This paper presents the design, implementation and measurements of a C-band down-conversion active mixer. A Gilbert topology has been modified to provide RF power and noise matching, in order to improve the overall noise behavior. The circuit was fabricated in a 47 GHz BiCMOS process, achieving voltage conversion gain of 24 dB, double-side-band noise figure of 9.5 dB, P_1dB and iIP₃ of -11 dBm and -4 dBm, respectively. Current consumption is 4 mA from a 3 V supply.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; MMIC mixers; heterojunction bipolar transistors; integrated circuit design; integrated circuit noise; power consumption; radio receivers; semiconductor materials; wireless LAN; 24 dB; 3 V; 4 mA; 47 GHz; 9.5 dB; BiCMOS process; C-band down-conversion active mixer; Gilbert topology; RF power; SiGe; compact integrated C-band wireless-LAN receivers; current consumption; double-side-band noise figure; low-power SiGe-HBT active double-balanced mixer; noise matching; voltage conversion gain; BiCMOS integrated circuits; Circuit noise; Circuit topology; Energy consumption; Gain; Impedance; Integrated circuit technology; Noise figure; Noise reduction; Radio frequency;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave and Optoelectronics Conference, 2003. IMOC 2003. Proceedings of the 2003 SBMO/IEEE MTT-S International

Print_ISBN

0-7803-7824-5

Type

conf

DOI

10.1109/IMOC.2003.1271851

Filename

1271851