DocumentCode
2613370
Title
Mechanism of Oxide Leakage Current of Silicide Gate MOSFET´s
Author
Watanabe, T. ; Ishiuchi, H. ; Tanaka, T. ; Mochizuki, T. ; Ozawa, O.
Author_Institution
Semiconductor Device Engineering Laboratory, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-city, Japan 210. (044) 511-2111
fYear
1984
fDate
30773
Firstpage
193
Lastpage
198
Abstract
Oxide leakage currents of silicide gate MOSFET´s have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.
Keywords
Annealing; Conductivity; Current measurement; Electrodes; Leakage current; MOS capacitors; Semiconductor films; Silicides; Silicon; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362044
Filename
4208568
Link To Document