Title :
Mechanism of Oxide Leakage Current of Silicide Gate MOSFET´s
Author :
Watanabe, T. ; Ishiuchi, H. ; Tanaka, T. ; Mochizuki, T. ; Ozawa, O.
Author_Institution :
Semiconductor Device Engineering Laboratory, Toshiba Corporation 1, Komukai Toshiba-cho, Saiwai-ku, Kawasaki-city, Japan 210. (044) 511-2111
Abstract :
Oxide leakage currents of silicide gate MOSFET´s have been studied. It has been revealed that large oxide leakage currents flow under the negative gate bias in spite of reasonable Fowler-Nordheim currents under the positive gate bias. Local electric field enhancement due to the interfacial molybdenum silicide asperity well explains the experimental results.
Keywords :
Annealing; Conductivity; Current measurement; Electrodes; Leakage current; MOS capacitors; Semiconductor films; Silicides; Silicon; Substrates;
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
DOI :
10.1109/IRPS.1984.362044
