DocumentCode
2613411
Title
New behavioral modeling method for crossbar-based memristor
Author
Liu, Gang ; Fang, Liang ; Li, Nan ; Sui, Bing Cai ; Duan, Zhi Kui
Author_Institution
Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
fYear
2010
fDate
22-24 Sept. 2010
Firstpage
356
Lastpage
359
Abstract
The potential utilization of memristor in future complex system draws worldwide attention. Since it can be used as an ultra-dense integrated component, many researchers make efforts to develop various applications of memristor. Here we present a modeling method based on nano-crossbar structure, with which the memristor behavioral model is constructed. At the same time, we analyze different methods of modeling and present advantages of the modeling method we propose. According to our method the model can be built more precisely and flexibility.
Keywords
memristors; nanoelectronics; behavioral modeling; crossbar-based memristor; nanocrossbar structure; ultradense integrated component; Analytical models; Gold; Hardware design languages; Integrated circuit modeling; Mathematical model; Memristors; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location
Shanghai
Print_ISBN
978-1-4244-6735-8
Electronic_ISBN
978-1-4244-6736-5
Type
conf
DOI
10.1109/PRIMEASIA.2010.5604888
Filename
5604888
Link To Document