DocumentCode :
2613411
Title :
New behavioral modeling method for crossbar-based memristor
Author :
Liu, Gang ; Fang, Liang ; Li, Nan ; Sui, Bing Cai ; Duan, Zhi Kui
Author_Institution :
Coll. of Comput. Sci., Nat. Univ. of Defense Technol., Changsha, China
fYear :
2010
fDate :
22-24 Sept. 2010
Firstpage :
356
Lastpage :
359
Abstract :
The potential utilization of memristor in future complex system draws worldwide attention. Since it can be used as an ultra-dense integrated component, many researchers make efforts to develop various applications of memristor. Here we present a modeling method based on nano-crossbar structure, with which the memristor behavioral model is constructed. At the same time, we analyze different methods of modeling and present advantages of the modeling method we propose. According to our method the model can be built more precisely and flexibility.
Keywords :
memristors; nanoelectronics; behavioral modeling; crossbar-based memristor; nanocrossbar structure; ultradense integrated component; Analytical models; Gold; Hardware design languages; Integrated circuit modeling; Mathematical model; Memristors; Semiconductor process modeling;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
Type :
conf
DOI :
10.1109/PRIMEASIA.2010.5604888
Filename :
5604888
Link To Document :
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