DocumentCode :
2613456
Title :
Multijunction component cells on LIPS III
Author :
Klausmeier-Brown, M.E. ; Chung, B.-C. ; Ristow, M. Ladle ; Kaminar, N.R. ; Werthen, J.G. ; Virshup, G.F.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
fYear :
1990
fDate :
21-25 May 1990
Firstpage :
1153
Abstract :
To evaluate the effects of the space environment on advanced III-V semiconductor solar cells, 19 experiments were placed on the LIPS III satellite. These experiments consisted of both single-junction GaAs cells and InGaAs and AlGaAs components for monolithic multijunction cells. The LIPS III satellite has been sending data to earth for nearly three years, and although the data have a large amount of scatter, there are enough data to start to make statistically meaningful observations on the relative performance of the cells on the panel. The cells, which, are protected by 20 mm coverslides, have displayed very little loss in short-circuit current. The short-circuit current is the performance parameter which can be most accurately derived from the available data. The III-V cells showed very little decay in short-circuit current after nearly three years in space
Keywords :
III-V semiconductors; aerospace testing; aluminium compounds; artificial satellites; gallium arsenide; indium compounds; semiconductor device testing; solar cell arrays; solar cells; space vehicle power plants; AlGaAs; GaAs; III-V semiconductor solar; InGaAs; LIPS III; arrays; coverslides; monolithic multijunction cells; performance; satellite; short-circuit current; space power; testing; Degradation; Gallium arsenide; Indium gallium arsenide; Lips; Photonic band gap; Protection; Satellites; Scattering; Short circuit currents; Temperature;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
Type :
conf
DOI :
10.1109/PVSC.1990.111796
Filename :
111796
Link To Document :
بازگشت