Title :
High-efficiency high-speed Ga1-xAlxAs light-emitting diode characteristics
Author :
Zhang, Tingting ; Sugeta, Takayuki ; Takemura, Mitsutaka ; Edwards, Paul J. ; Cheung, William N. ; Lynam, Peter
Author_Institution :
Adv. Telecommun. Res. Centre, Canberra Univ., ACT, Australia
Abstract :
We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm2 current density). The power-bandwidth product is the highest among those reported for Ga1-xAlxAs light-emitting diodes
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hole density; light emitting diodes; liquid phase epitaxial growth; semiconductor growth; 23 mW; 30 percent; 50 MHz; 50 mA; GaAlAs; LED; active region; ambient temperature; drive current; electrical properties; external quantum efficiency; high-efficiency high-speed Ga1-xAlxAs light-emitting diode characteristics; hole concentration; modulation bandwidth; optical properties; output power; power-bandwidth product; room temperature; single-step liquid phase epitaxy; Bandwidth; Current measurement; Density measurement; Epitaxial growth; High speed optical techniques; Light emitting diodes; Optical modulation; Power generation; Power measurement; Temperature measurement;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610075
