DocumentCode
2613459
Title
High-efficiency high-speed Ga1-xAlxAs light-emitting diode characteristics
Author
Zhang, Tingting ; Sugeta, Takayuki ; Takemura, Mitsutaka ; Edwards, Paul J. ; Cheung, William N. ; Lynam, Peter
Author_Institution
Adv. Telecommun. Res. Centre, Canberra Univ., ACT, Australia
fYear
1996
fDate
8-11 Dec 1996
Firstpage
79
Lastpage
82
Abstract
We have studied the electrical and optical properties of high-efficiency high-speed light-emitting diodes, fabricated by single-step liquid phase epitaxy. The external quantum efficiency and the modulation bandwidth are measured as functions of drive current, hole concentration in the active region, and ambient temperature, respectively. Output power of 23 mW, external quantum efficiency of 30% and modulation bandwidth of 50 MHz were measured at room temperature and 50 mA drive current (60 A/cm2 current density). The power-bandwidth product is the highest among those reported for Ga1-xAlxAs light-emitting diodes
Keywords
III-V semiconductors; aluminium compounds; gallium arsenide; hole density; light emitting diodes; liquid phase epitaxial growth; semiconductor growth; 23 mW; 30 percent; 50 MHz; 50 mA; GaAlAs; LED; active region; ambient temperature; drive current; electrical properties; external quantum efficiency; high-efficiency high-speed Ga1-xAlxAs light-emitting diode characteristics; hole concentration; modulation bandwidth; optical properties; output power; power-bandwidth product; room temperature; single-step liquid phase epitaxy; Bandwidth; Current measurement; Density measurement; Epitaxial growth; High speed optical techniques; Light emitting diodes; Optical modulation; Power generation; Power measurement; Temperature measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location
Canberra, ACT
Print_ISBN
0-7803-3374-8
Type
conf
DOI
10.1109/COMMAD.1996.610075
Filename
610075
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