DocumentCode :
2613500
Title :
The Role of Thermal Grooving, Thermotransport and Electrotransport on the Failure of Thin Film Metallizations
Author :
Hummel, R.E. ; Goho, S.Matts ; DeHoff, R.T.
Author_Institution :
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
fYear :
1984
fDate :
30773
Firstpage :
234
Lastpage :
241
Abstract :
Grain boundary grooving, thermotransport and electrotransport operate simultaneously during current stressing of thin film metallizations. For different operating conditions or positions along a stripe, they may compete or reinforce each other in promoting hole formation. This work demonstrates that second components may influence this competition in a variety of ways. As the interactions become better understood, they may ultimately provide the basis for controlling hole formation and predicting reliability of thin film stripes.
Keywords :
Annealing; Doping; Electrons; Failure analysis; Gold; Grain boundaries; Heating; Metallization; Substrates; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location :
Las Vegas, NV, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1984.362052
Filename :
4208576
Link To Document :
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