DocumentCode
2613500
Title
The Role of Thermal Grooving, Thermotransport and Electrotransport on the Failure of Thin Film Metallizations
Author
Hummel, R.E. ; Goho, S.Matts ; DeHoff, R.T.
Author_Institution
Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
fYear
1984
fDate
30773
Firstpage
234
Lastpage
241
Abstract
Grain boundary grooving, thermotransport and electrotransport operate simultaneously during current stressing of thin film metallizations. For different operating conditions or positions along a stripe, they may compete or reinforce each other in promoting hole formation. This work demonstrates that second components may influence this competition in a variety of ways. As the interactions become better understood, they may ultimately provide the basis for controlling hole formation and predicting reliability of thin film stripes.
Keywords
Annealing; Doping; Electrons; Failure analysis; Gold; Grain boundaries; Heating; Metallization; Substrates; Transistors;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium, 1984. 22nd Annual
Conference_Location
Las Vegas, NV, USA
ISSN
0735-0791
Type
conf
DOI
10.1109/IRPS.1984.362052
Filename
4208576
Link To Document