• DocumentCode
    2613500
  • Title

    The Role of Thermal Grooving, Thermotransport and Electrotransport on the Failure of Thin Film Metallizations

  • Author

    Hummel, R.E. ; Goho, S.Matts ; DeHoff, R.T.

  • Author_Institution
    Department of Materials Science and Engineering, University of Florida, Gainesville, FL 32611
  • fYear
    1984
  • fDate
    30773
  • Firstpage
    234
  • Lastpage
    241
  • Abstract
    Grain boundary grooving, thermotransport and electrotransport operate simultaneously during current stressing of thin film metallizations. For different operating conditions or positions along a stripe, they may compete or reinforce each other in promoting hole formation. This work demonstrates that second components may influence this competition in a variety of ways. As the interactions become better understood, they may ultimately provide the basis for controlling hole formation and predicting reliability of thin film stripes.
  • Keywords
    Annealing; Doping; Electrons; Failure analysis; Gold; Grain boundaries; Heating; Metallization; Substrates; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1984. 22nd Annual
  • Conference_Location
    Las Vegas, NV, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1984.362052
  • Filename
    4208576