DocumentCode
2613518
Title
Full adder designed with MOSFET and single-electron transistor hybrid circuit
Author
Sui, Bingcai ; Fang, Liang ; Chi, Yaqing
Author_Institution
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
fYear
2010
fDate
22-24 Sept. 2010
Firstpage
329
Lastpage
332
Abstract
It is generally accepted that, sooner or later, MOS-based circuits cannot be reduced further in (feature) size due to fundamental physical restrictions. Recently, many logic gates based on SET have emerged, representative SET/CMOS hybrid logic circuits are developed to avoid the disadvantage. The characteristics of SET are used to reduce the number of conventional devices. The tunable Coulomb oscillation characteristics are analyzed. As a trick, the cell with only one input port is analyzed to generate needed waveforms. Based on the cell, the Sum and Carry circuits are simply obtained. Simulation result shows that hybrid MOSFET/SET full adder can work normally at room temperature. One-bit full adder reduces much less area compared with complementary CMOS full adder, and not reduces the high performance. It is very useful for the logic and architecture design based on SET transistors.
Keywords
MOSFET; hybrid integrated circuits; single electron transistors; SET transistors; SET-CMOS hybrid logic circuits; architecture design; carry circuit; complementary CMOS full adder; hybrid MOSFET-SET full adder; one-bit full adder; single-electron transistor hybrid circuit; sum circuit; temperature 293 K to 298 K; tunable Coulomb oscillation characteristics; Adders; Capacitance; Computer architecture; Logic gates; MOSFET circuits; Microprocessors; Simulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location
Shanghai
Print_ISBN
978-1-4244-6735-8
Electronic_ISBN
978-1-4244-6736-5
Type
conf
DOI
10.1109/PRIMEASIA.2010.5604894
Filename
5604894
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