Title :
Full adder designed with MOSFET and single-electron transistor hybrid circuit
Author :
Sui, Bingcai ; Fang, Liang ; Chi, Yaqing
Author_Institution :
Sch. of Comput., Nat. Univ. of Defense Technol., Changsha, China
Abstract :
It is generally accepted that, sooner or later, MOS-based circuits cannot be reduced further in (feature) size due to fundamental physical restrictions. Recently, many logic gates based on SET have emerged, representative SET/CMOS hybrid logic circuits are developed to avoid the disadvantage. The characteristics of SET are used to reduce the number of conventional devices. The tunable Coulomb oscillation characteristics are analyzed. As a trick, the cell with only one input port is analyzed to generate needed waveforms. Based on the cell, the Sum and Carry circuits are simply obtained. Simulation result shows that hybrid MOSFET/SET full adder can work normally at room temperature. One-bit full adder reduces much less area compared with complementary CMOS full adder, and not reduces the high performance. It is very useful for the logic and architecture design based on SET transistors.
Keywords :
MOSFET; hybrid integrated circuits; single electron transistors; SET transistors; SET-CMOS hybrid logic circuits; architecture design; carry circuit; complementary CMOS full adder; hybrid MOSFET-SET full adder; one-bit full adder; single-electron transistor hybrid circuit; sum circuit; temperature 293 K to 298 K; tunable Coulomb oscillation characteristics; Adders; Capacitance; Computer architecture; Logic gates; MOSFET circuits; Microprocessors; Simulation;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
DOI :
10.1109/PRIMEASIA.2010.5604894