Title :
FEM-based thermal analysis of IGBT
Author :
Zhang, Jian ; Lü, Changzhi ; Zhang, Xiaoling ; Huang, Yueqiang ; Meng, Xianlei
Author_Institution :
Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China
Abstract :
A novel 3-D IGBT thermal model is implemented. The temperature distribution in different conditions was analyzed by using finite element thermal analysis software ANSYS. Simulation results under the conditions of different heat source spacing, respectively 5μm, 10μm and 15μm, show that increasing the heat source spacing appropriately can reduce the thermal coupling effect, thereby reducing the peak temperature of IGBT. Temperature dependent thermal conductivity of Si was considered during simulation, the results indicate the peak temperature rise 4.8K in the same power. The results of thermal resistance obtained by simulation are in agreement with the measured value.
Keywords :
finite element analysis; insulated gate bipolar transistors; semiconductor device models; semiconductor process modelling; temperature distribution; thermal analysis; thermal conductivity; thermal resistance; 3D IGBT thermal model; FEM-based thermal analysis; distance 10 mum; distance 15 mum; distance 5 mum; finite element thermal analysis software ANSYS; heat source spacing; insulate gate bipolar transistor; peak temperature; temperature dependent thermal conductivity; temperature distribution; thermal coupling effect; thermal resistance; Conductivity; Heating; Insulated gate bipolar transistors; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
DOI :
10.1109/PRIMEASIA.2010.5604896
