FEM-based thermal analysis of IGBT

Author

Zhang, Jian ; Lü, Changzhi ; Zhang, Xiaoling ; Huang, Yueqiang ; Meng, Xianlei

Author_Institution

Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China

fYear

2010

fDate

22-24 Sept. 2010

Firstpage

321

Lastpage

324

Abstract

A novel 3-D IGBT thermal model is implemented. The temperature distribution in different conditions was analyzed by using finite element thermal analysis software ANSYS. Simulation results under the conditions of different heat source spacing, respectively 5μm, 10μm and 15μm, show that increasing the heat source spacing appropriately can reduce the thermal coupling effect, thereby reducing the peak temperature of IGBT. Temperature dependent thermal conductivity of Si was considered during simulation, the results indicate the peak temperature rise 4.8K in the same power. The results of thermal resistance obtained by simulation are in agreement with the measured value.

Keywords

finite element analysis; insulated gate bipolar transistors; semiconductor device models; semiconductor process modelling; temperature distribution; thermal analysis; thermal conductivity; thermal resistance; 3D IGBT thermal model; FEM-based thermal analysis; distance 10 mum; distance 15 mum; distance 5 mum; finite element thermal analysis software ANSYS; heat source spacing; insulate gate bipolar transistor; peak temperature; temperature dependent thermal conductivity; temperature distribution; thermal coupling effect; thermal resistance; Conductivity; Heating; Insulated gate bipolar transistors; Temperature dependence; Temperature distribution; Temperature measurement; Thermal conductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-6735-8

Electronic_ISBN

978-1-4244-6736-5

Type

conf

DOI

10.1109/PRIMEASIA.2010.5604896

Filename

5604896