DocumentCode
2613556
Title
Impact of depletion and doping variation in poly gate and energy quantization in the substrate on gate leakage current in a nano-MOSFET
Author
Chaudhry, Amit ; Roy, J.N.
Author_Institution
Univ. Inst. of Eng. & Technol., Panjab Univ., Chandigarh, India
fYear
2010
fDate
22-24 Sept. 2010
Firstpage
325
Lastpage
328
Abstract
In this paper, we investigate the effect of depletion and doping variation in the poly-silicon gate on the direct tunneling current of an ultra thin oxide nanoscale n-MOSFET. The tunneling probability is estimated by Wentzel-Kramers-Brilliouin approximation. The results have also been compared with the numerically reported results and show good agreement.
Keywords
MOSFET; WKB calculations; doping; elemental semiconductors; leakage currents; probability; silicon; Impact; Si; Wentzel-Kramers-Brilliouin approximation; depletion impact; direct tunneling current; doping variation; energy quantization; gate leakage current; nanoMOSFET; polysilicon gate; tunneling probability; ultra thin oxide nanoscale n-MOSFET; Electric potential; Logic gates; MOSFETs; Quantization; Silicon; Substrates; Tunneling; WKB; electrons; poly-depletion; quantization; tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location
Shanghai
Print_ISBN
978-1-4244-6735-8
Electronic_ISBN
978-1-4244-6736-5
Type
conf
DOI
10.1109/PRIMEASIA.2010.5604897
Filename
5604897
Link To Document