• DocumentCode
    2613569
  • Title

    A study of test system for thermal resistance of IGBT

  • Author

    Huang, Yueqiang ; Lü, Changzhi ; Xie, Xuesong ; Fan, Yu ; Zhang, Jian ; Meng, Xianlei

  • Author_Institution
    Reliability Phys. Lab., Beijing Univ. of Technol., Beijing, China
  • fYear
    2010
  • fDate
    22-24 Sept. 2010
  • Firstpage
    312
  • Lastpage
    315
  • Abstract
    IGBTs have the advantages of BJTs and MOSFETs, they are widely used in household appliances and industrial production. But thermal problem has affected the development of IGBT, so its accurate measurement of thermal resistance and temperature rise is very important. In this paper, we propose a new test system for thermal resistance of IGBT, in this test system, we use digital approach, choose the voltage between collector and emitter with constant current and gate-collector short as heat-sensitive parameter, the results show that this system has the advantages of accuracy and good measurement reproducibility, and it has better feasibility.
  • Keywords
    insulated gate bipolar transistors; thermal resistance; IGBT; gate-collector; heat-sensitive parameter; insulated gate bipolar transistor; thermal resistance; Current measurement; Electrical resistance measurement; Heating; Semiconductor device measurement; Temperature measurement; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-6735-8
  • Electronic_ISBN
    978-1-4244-6736-5
  • Type

    conf

  • DOI
    10.1109/PRIMEASIA.2010.5604898
  • Filename
    5604898