Title :
Scalable Gummel-Poon model for high-speed SiGe HBTs
Author :
Weijian, Zhou ; Zhiqun, Cheng ; Liu Jun
Author_Institution :
Key Lab. of RF Circuits & Syst., Hangzhou Dianzi Univ., Hangzhou, China
Abstract :
A scalable Gummel-Poon model for high-speed SiGe HBTs is developed based on Gummel-Poon model in this paper. This model is well applied to simulation software of ADS and Hspice. The scaling is mainly based on different physical dimension of individual devices, all the scaling parameters in the scaling equations are extracted directly from the measurement data of various dimension. The correctness of this scalable model is further verified by the quite good fit between measured and simulated results on DC, CV, Ft and S parameters at the frequency up to 30 GHz.
Keywords :
Ge-Si alloys; heterojunction bipolar transistors; semiconductor device models; semiconductor materials; ADS simulation software; Hspice; SiGe; high-speed HBT; scalable Gummel-Poon model; Electrical resistance measurement; Equations; Integrated circuit modeling; Mathematical model; Parameter extraction; Silicon germanium; Time measurement; Gummel-Poon model; SiGe HBT; scalable model;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
DOI :
10.1109/PRIMEASIA.2010.5604899
