First space flight of InP solar cells

Author

Yamaguchi, M. ; Hayashi, T. ; Ushirokawa, A. ; Takahashi, Y. ; Koubata, M. ; Hashimoto, M. ; Ikegami, S. ; Arai, H. ; Orii, T. ; Okazaki, H. ; Takamoto, T. ; Ura, M. ; Ohmori, M.

Author_Institution

NTT Opto-electron. Lab., Ibaraki, Japan

fYear

1990

fDate

21-25 May 1990

Firstpage

1198

Abstract

A large-scale, commercial process to produce high-efficiency diffused junction InP solar cells is developed. Proton irradiation effects on InP solar cells are also studied. Superior proton resistance of InP cells is confirmed by defect analysis. 1300 pieces of InP solar cells (2×1 cm²), with efficiencies of 16-17%, were used as the power source for the lunar orbiter of the Japanese scientific satellite MUSES-A, launched in January 1990. The InP solar cells have been demonstrated to be stable in space

Keywords

III-V semiconductors; aerospace testing; artificial satellites; indium compounds; semiconductor device testing; solar cells; space vehicle power plants; InP solar cells; defect analysis; diffused junction; power source; proton irradiation; proton resistance; satellite MUSES-A; semiconductor device; space power; Coatings; Gallium arsenide; Indium phosphide; Large-scale systems; Lighting; Moon; Photovoltaic cells; Protons; Satellites; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE

Conference_Location

Kissimmee, FL

Type

conf

DOI

10.1109/PVSC.1990.111805

Filename

111805