Title :
First space flight of InP solar cells
Author :
Yamaguchi, M. ; Hayashi, T. ; Ushirokawa, A. ; Takahashi, Y. ; Koubata, M. ; Hashimoto, M. ; Ikegami, S. ; Arai, H. ; Orii, T. ; Okazaki, H. ; Takamoto, T. ; Ura, M. ; Ohmori, M.
Author_Institution :
NTT Opto-electron. Lab., Ibaraki, Japan
Abstract :
A large-scale, commercial process to produce high-efficiency diffused junction InP solar cells is developed. Proton irradiation effects on InP solar cells are also studied. Superior proton resistance of InP cells is confirmed by defect analysis. 1300 pieces of InP solar cells (2×1 cm2), with efficiencies of 16-17%, were used as the power source for the lunar orbiter of the Japanese scientific satellite MUSES-A, launched in January 1990. The InP solar cells have been demonstrated to be stable in space
Keywords :
III-V semiconductors; aerospace testing; artificial satellites; indium compounds; semiconductor device testing; solar cells; space vehicle power plants; InP solar cells; defect analysis; diffused junction; power source; proton irradiation; proton resistance; satellite MUSES-A; semiconductor device; space power; Coatings; Gallium arsenide; Indium phosphide; Large-scale systems; Lighting; Moon; Photovoltaic cells; Protons; Satellites; Transient analysis;
Conference_Titel :
Photovoltaic Specialists Conference, 1990., Conference Record of the Twenty First IEEE
Conference_Location :
Kissimmee, FL
DOI :
10.1109/PVSC.1990.111805
