DocumentCode :
2613767
Title :
The Prediction of Textured Poly Floating Gate Memory Endurance
Author :
Wegener, H.A.Richard ; Guterman, Daniel C.
Author_Institution :
Xicor, Inc., 851 Buckeye Ct., Milpitas, California 95035
fYear :
1985
fDate :
31107
Firstpage :
11
Lastpage :
17
Abstract :
We have described a coherent body of understanding and data that permits the prediction of product endurance, and the use of devices for accelerated testing, from first principle device models. This fortunate circumstance arises from the advantageous technological feature of textured poly tunneling, namely that there is one, and only one, mechanism that is prevalent in determining the end of endurance. This one mechanism is trap-up, the build-up of negative charge in the dielectric in proportion to the fluence of the tunnel current. The model for window closure and for single cell endurance flows naturally from this concept. The predictability of accelerated tests is also the result of this single unifying mechanism. The relationship with product endurance follows from basic statistical considerations.
Keywords :
Dielectrics; Electrons; Laplace equations; Manufacturing; Nonvolatile memory; Semiconductor memory; Shape; Surface texture; Tunneling; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
ISSN :
0735-0791
Type :
conf
DOI :
10.1109/IRPS.1985.362068
Filename :
4208595
Link To Document :
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