A 2.4GHz high efficient monolithic Class E power amplifier

Author

Jie, Su ; Shulin, Zhang ; Lei, Chen ; Liang, Tian ; Jin, Zhou ; Ying, Ruan ; Feng, Ran ; Zongsheng, Lai

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2010

fDate

22-24 Sept. 2010

Firstpage

271

Lastpage

274

Abstract

This paper presents a 2.4GHz monolithic Class E power amplifier based on Grace 0.18um SiGe BiCMOS technology. It has a two-stage structure and adopts small DC feed inductors and on-chip matching networks. Without any off-chip components, the power amplifier achieves maximum output power of 22.4dBm, and the PAE is 33% with 2V supply. After optimizing the component parameter, the input and output terminals are both well matched to baseband and antenna respectively. With EER or ET technology this switch-mode amplifier can realize linear amplification, resulting in impressive high efficient in future communication system.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; integrated circuit design; power amplifiers; semiconductor materials; DC feed inductors; PAE; SiGe; SiGe BiCMOS technology; antenna; baseband; bipolar complementary metal-oxide-semiconductor; communication system; component parameter; efficiency 33 percent; frequency 2.4 GHz; input terminal; linear amplification; maximum output power; monolithic Class E power amplifier; on-chip matching networks; output terminal; power added efficiency; switch-mode amplifier; two-stage structure; voltage 2 V; CMOS integrated circuits; Capacitors; Inductors; Power amplifiers; Radio frequency; Switches; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-6735-8

Electronic_ISBN

978-1-4244-6736-5

Type

conf

DOI

10.1109/PRIMEASIA.2010.5604908

Filename

5604908