Title :
A fully integrated, highly linear SiGe BiCMOS class-AB power amplifier targeting 2.4GHz applications
Author :
Shulin, Zhang ; Jie, Su ; Lei, Chen ; Liang, Tian ; Jin, Zhou ; Ying, Ruan ; Liu Shengfii ; Wei, Zhang ; Lin, Hua ; Feng, Ran ; Zongsheng, Lai
Author_Institution :
Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China
Abstract :
This paper presents a 2.4 GHz fully integrated power amplifier based on 0.18 μm SiGe BiCMOS technology for wireless local area network applications. The power amplifier shows a 1 dB compression output power of 22.19 dBm at an input power of 0.135 dBm. A temperature-insensitive bias circuit is used in this PA design to improve the amplifier linearity. The total fabricated die size is about 1.5 mm × 1.2 mm. The designed PA based on SiGe BiCMOS technology demonstrates a competitive linearity performance compared with GaAs, when considering the factors of cost and process complexity.
Keywords :
BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; semiconductor materials; wireless LAN; PA design; SiGe; frequency 2.4 GHz; fully integrated power amplifier; highly-linear BiCMOS class-AB power amplifier; size 0.18 mum; temperature-insensitive bias circuit; wireless local area network applications; BiCMOS integrated circuits; Equations; Gain; Linearity; Power amplifiers; Silicon germanium; Wireless communication;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
DOI :
10.1109/PRIMEASIA.2010.5604909
