A fully integrated, highly linear SiGe BiCMOS class-AB power amplifier targeting 2.4GHz applications

Author

Shulin, Zhang ; Jie, Su ; Lei, Chen ; Liang, Tian ; Jin, Zhou ; Ying, Ruan ; Liu Shengfii ; Wei, Zhang ; Lin, Hua ; Feng, Ran ; Zongsheng, Lai

Author_Institution

Inst. of Microelectron. Circuit & Syst., East China Normal Univ., Shanghai, China

fYear

2010

fDate

22-24 Sept. 2010

Firstpage

275

Lastpage

278

Abstract

This paper presents a 2.4 GHz fully integrated power amplifier based on 0.18 μm SiGe BiCMOS technology for wireless local area network applications. The power amplifier shows a 1 dB compression output power of 22.19 dBm at an input power of 0.135 dBm. A temperature-insensitive bias circuit is used in this PA design to improve the amplifier linearity. The total fabricated die size is about 1.5 mm × 1.2 mm. The designed PA based on SiGe BiCMOS technology demonstrates a competitive linearity performance compared with GaAs, when considering the factors of cost and process complexity.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; UHF power amplifiers; semiconductor materials; wireless LAN; PA design; SiGe; frequency 2.4 GHz; fully integrated power amplifier; highly-linear BiCMOS class-AB power amplifier; size 0.18 mum; temperature-insensitive bias circuit; wireless local area network applications; BiCMOS integrated circuits; Equations; Gain; Linearity; Power amplifiers; Silicon germanium; Wireless communication;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in

Conference_Location

Shanghai

Print_ISBN

978-1-4244-6735-8

Electronic_ISBN

978-1-4244-6736-5

Type

conf

DOI

10.1109/PRIMEASIA.2010.5604909

Filename

5604909