Title :
XPS-Analysis of GaAs-Surface Quality Affecting Interelectrode Material Migration
Author :
Kretschmer, K.-H. ; Hartnagel, H.L.
Author_Institution :
Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 6loo Darmstadt, FRG
Abstract :
XPS-studies of differently treated (100)-GaAs-surfaces were undertaken and correlated with the threshold for material migration across the GaAs-surface between neighbouring Al-electrodes. 5 surface conditions based on various etching and cleaning processes as commonly employed for the manufacture of GaAs devices have been investigated. The XPS-spectra show that high threshold values can be obtained by treatments resulting in a strongly reduced surface oxygen content.
Keywords :
Circuits; Cleaning; Electrodes; Electrons; Etching; Gallium arsenide; Manufacturing processes; Semiconductor device measurement; Surface treatment; Threshold voltage;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362073
