• DocumentCode
    2613886
  • Title

    High Voltage Screening of GaAs Power FET´s: Effect on Burn-In Yield and Modes of Catastrophic Device Failure

  • Author

    Immorlica, Anthony A., Jr. ; Michener, John R.

  • Author_Institution
    McDonnell Douglas Microelectronic Center, Huntington Beach, Ca.
  • fYear
    1985
  • fDate
    31107
  • Firstpage
    49
  • Lastpage
    53
  • Abstract
    High voltage DC screening virtually eliminates the catastrophic burn-in failure mode of GaAs Power FETs during DC biased burn-in testing. Catastrophic damage during DC high-voltage screening of power GaAs MESFET´s was limited by an ultra-fast circuit breaker. Failures were found to be primarily due to gate-drain runaways that occur at or near the surface.
  • Keywords
    Circuit testing; Current-voltage characteristics; FETs; Failure analysis; Gallium arsenide; Radio frequency; Semiconductor device testing; Stress; Temperature distribution; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1985. 23rd Annual
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1985.362074
  • Filename
    4208601
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613886