Title :
High Voltage Screening of GaAs Power FET´s: Effect on Burn-In Yield and Modes of Catastrophic Device Failure
Author :
Immorlica, Anthony A., Jr. ; Michener, John R.
Author_Institution :
McDonnell Douglas Microelectronic Center, Huntington Beach, Ca.
Abstract :
High voltage DC screening virtually eliminates the catastrophic burn-in failure mode of GaAs Power FETs during DC biased burn-in testing. Catastrophic damage during DC high-voltage screening of power GaAs MESFET´s was limited by an ultra-fast circuit breaker. Failures were found to be primarily due to gate-drain runaways that occur at or near the surface.
Keywords :
Circuit testing; Current-voltage characteristics; FETs; Failure analysis; Gallium arsenide; Radio frequency; Semiconductor device testing; Stress; Temperature distribution; Voltage;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362074
