Title :
Failure Mechanism Study of GaAs MODFET Devices and Integrated Circuits
Author :
Christou, A. ; Tseng, W. ; Peckerar, M. ; Anderson, W.T. ; McCarthy, D.M. ; Buot, F.A. ; Campbell, A.B. ; Knudson, A.R.
Author_Institution :
Naval Research Laboratory, Washington, D.C. 20375
Abstract :
GaAs Modulation Doped Field Effect Transistor (MOD-FET) integrated circuits have been accelerated stress tested under bias at 150°C, 200°C, 210°C. The failure mode has been identified to be a diffusion controlled degradation of the 2 DEC layers. Alpha particle irradiation resulted in a decrease in charge collection efficiency, and catastrophic gate burnout.
Keywords :
Circuit testing; Epitaxial layers; FET integrated circuits; Failure analysis; Gallium arsenide; Integrated circuit testing; Life estimation; MODFET circuits; MODFET integrated circuits; Stress;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362075
