• DocumentCode
    2613914
  • Title

    Failure Mechanism Study of GaAs MODFET Devices and Integrated Circuits

  • Author

    Christou, A. ; Tseng, W. ; Peckerar, M. ; Anderson, W.T. ; McCarthy, D.M. ; Buot, F.A. ; Campbell, A.B. ; Knudson, A.R.

  • Author_Institution
    Naval Research Laboratory, Washington, D.C. 20375
  • fYear
    1985
  • fDate
    31107
  • Firstpage
    54
  • Lastpage
    59
  • Abstract
    GaAs Modulation Doped Field Effect Transistor (MOD-FET) integrated circuits have been accelerated stress tested under bias at 150°C, 200°C, 210°C. The failure mode has been identified to be a diffusion controlled degradation of the 2 DEC layers. Alpha particle irradiation resulted in a decrease in charge collection efficiency, and catastrophic gate burnout.
  • Keywords
    Circuit testing; Epitaxial layers; FET integrated circuits; Failure analysis; Gallium arsenide; Integrated circuit testing; Life estimation; MODFET circuits; MODFET integrated circuits; Stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Reliability Physics Symposium, 1985. 23rd Annual
  • Conference_Location
    Orlando, FL, USA
  • ISSN
    0735-0791
  • Type

    conf

  • DOI
    10.1109/IRPS.1985.362075
  • Filename
    4208602
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2613914