Title :
Electromigration-Induced Short Circuit Failure
Author :
Towner, Janet M.
Author_Institution :
Philips Research Laboratories Sunnyvale, Signetics Corporation, Sunnyvale, CA 94088
Abstract :
A study was made of electromigration-induced short circult failure in multilevel metal structures. The material chosen for this study was Al deposited on a layer of TiW, a metallization prone to the formation of whiskers during current stress. The dominant failure mode was found to be interlayer metal shorts. Experiments were performed to examine the relationship between short circuit lifetime and temperature, current density, and interlayer dielectric thickness.
Keywords :
Aluminum; Circuit testing; Conducting materials; Conductors; Dielectric thin films; Electromigration; Inorganic materials; Laboratories; Metallization; Stress;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362080
