Title :
Electromigration and the Current Density Dependence
Author :
Schafft, Harry A. ; Grant, Tammy C. ; Saxena, A.N. ; Kao, Chi-Yi
Author_Institution :
National Bureau of Standards, Gaithersburg, MD 20899
Abstract :
The empirical expression used to predict metallization resistance to electromigration failure involves the current density raised to the power n. A value for n of 1.5 was obtained from stressing unpassivated Al 1% Si metallization test structures over a range of current densities from 0.5 to 2.5 MA/cm2. The steps taken to ensure an accurate estimate of the metallization stress conditions of temperature and current density to obtain this value are described in detail.
Keywords :
Circuit testing; Current density; Electrical resistance measurement; Electromigration; Heating; Integrated circuit testing; Metallization; Semiconductor device testing; Stress; Temperature; Electromigration; VLSI; integrated circuits; metallization; microelectronics; reliability; semiconductors; test chip; test structures;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362082
