Title :
A method to reduce process-related sensitivity in sub-threshold ICs and its circuit implementation
Author :
Hao, Luo ; Yan, Han ; Cheung, Ray C C
Author_Institution :
Inst. of Microelectron. & Photoelectron., Zhejiang Univ., Hangzhou, China
Abstract :
This paper provides a novel bulk-compensated technique used in sub-threshold integrated circuits (ICs), solving the problem that MOS transistors in the sub-threshold area are extremely sensitive to the issue of process variation. The bulk-compensated technique builds up a unique "detecting-feedback" loop, and achieves an effective compensation for the process-related fluctuation of MOS transistors through bulk potential modulation. A simple circuit implementation of the proposed technique is also presented, which is implemented in 0.13 μm CMOS mixed-signal process. With the introduction of the bulk-compensated circuit, the sensitivity of MOS transistors to process variation in the sub-threshold area is greatly reduced.
Keywords :
CMOS integrated circuits; MOSFET; CMOS mixed-signal process; MOS transistors; bulk potential modulation; bulk-compensated technique; circuit implementation; detecting-feedback loop; process-related sensitivity; subthreshold IC; subthreshold integrated circuits; CMOS integrated circuits; MOSFETs; Modulation; Sensitivity; Threshold voltage; Transconductance;
Conference_Titel :
Microelectronics and Electronics (PrimeAsia), 2010 Asia Pacific Conference on Postgraduate Research in
Conference_Location :
Shanghai
Print_ISBN :
978-1-4244-6735-8
Electronic_ISBN :
978-1-4244-6736-5
DOI :
10.1109/PRIMEASIA.2010.5604922