Title :
Si Nodule Formation in Al-Si Metallization
Author :
Tatsuzawa, T. ; Madokoro, S. ; Hagiwara, S.
Author_Institution :
Electron Device Division, Oki Electric Industry Co. Ltd., 550-1, Higashiasakawa, Hachioji, Tokyo 193, Japan
Abstract :
Si in Al-Si alloy are precipitated during heat treatment. If process conditions are not appropriate, they grow more than lum, and become causes of some troubles. The size of these "Si nodule" is determined by metallization process conditions. Electromigration tests as a parameter of Si nodule size showed that large Si nodule degraded the reliability of metallization.
Keywords :
Annealing; Electromigration; Electron devices; Heat treatment; Heating; Metallization; Metals industry; Silicon alloys; Temperature dependence; Thermal stresses;
Conference_Titel :
Reliability Physics Symposium, 1985. 23rd Annual
Conference_Location :
Orlando, FL, USA
DOI :
10.1109/IRPS.1985.362088
