Title :
Temperature dependent noise performance of Hg1-xCdx Te photoconductive detectors
Author :
Musca, C.A. ; Siliquini, J.F. ; Smith, E.P.G. ; Nener, B.D. ; Faraone, L.
Author_Institution :
Dept. of Electr. & Electron. Eng., Western Australia Univ., Nedlands, WA, Australia
Abstract :
Background limited infrared photodetector (BLIP) performance, attained at cryogenic temperatures, is the maximum performance achievable by a photoconductive detector. By increasing the operating temperature, low cost detectors can be realised using thermoelectric cooling (>200 K). Investigation of temperature dependent performance of Hg1-xCdxTe infrared detectors is essential for developing device structures and fabrication technologies capable of producing BLIP performance. In this paper the performance of n-type x=0.31 Hg1-xCdxTe photoconductors under reduced cooling is examined experimentally and theoretically. Measurements gave a background limited Dλ* of 1.9×1011 cm Hz1/2W-1 up to 170 K and Dλ* values of 7.3×1010 and 6.4×109 cm Hz 1/2W-1 were measured at 200 K and 300 K, respectively
Keywords :
1/f noise; II-VI semiconductors; cadmium compounds; carrier lifetime; infrared detectors; mercury compounds; photoconducting devices; photoconducting materials; photodetectors; semiconductor device noise; 170 K; 200 K; 200 to 300 K; 3 to 5 mum; 300 K; Hg0.69Cd0.31Te; Hg1-xCdxTe photoconductive detectors; HgCdTe; background limited infrared photodetector performance; cryogenic temperatures; device structures; fabrication technologies; low cost detectors; n-type; operating temperature; reduced cooling; temperature dependent noise performance; thermoelectric cooling; Cooling; Costs; Cryogenics; Infrared detectors; Mercury (metals); Photoconductivity; Photodetectors; Tellurium; Temperature dependence; Thermoelectricity;
Conference_Titel :
Optoelectronic and Microelectronic Materials And Devices Proceedings, 1996 Conference on
Conference_Location :
Canberra, ACT
Print_ISBN :
0-7803-3374-8
DOI :
10.1109/COMMAD.1996.610079
